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| 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to "program'' unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor-trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO-92 plastic package for high-volume requirements, this package is readily adaptable for use in automatic insertion equipment. Features PUTs 40 VOLTS, 300 mW G A K * * * * * * Programmable - RBB, h, IV and IP Low On-State Voltage - 1.5 V Maximum @ IF = 50 mA Low Gate to Anode Leakage Current - 10 nA Maximum High Peak Output Voltage - 11 V Typical Low Offset Voltage - 0.35 V Typical (RG = 10 kW) Pb-Free Packages are Available* 1 TO-92 (TO-226AA) CASE 029 STYLE 16 2 3 MARKING DIAGRAM 2N 602x AYWW G G = Device Code x = 7 or 8 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) 2N602x PIN ASSIGNMENT 1 2 3 Anode Gate Cathode ORDERING INFORMATION *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2006 See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Preferred devices are recommended choices for future use and best overall value. 1 May, 2006 - Rev.6 Publication Order Number: 2N6027/D 2N6027, 2N6028 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Power Dissipation* Derate Above 25C DC Forward Anode Current* Derate Above 25C DC Gate Current* Repetitive Peak Forward Current 100 ms Pulse Width, 1% Duty Cycle 20 ms Pulse Width, 1% Duty Cycle* Non-Repetitive Peak Forward Current 10 ms Pulse Width Gate to Cathode Forward Voltage* Gate to Cathode Reverse Voltage* Gate to Anode Reverse Voltage* Anode to Cathode Voltage* (Note 1) Capacitive Discharge Energy (Note 2) Power Dissipation (Note 3) Operating Temperature Junction Temperature Storage Temperature Range Symbol PF 1/qJA IT IG ITRM 1.0 2.0 ITSM VGKF VGKR VGAR VAK E PD TOPR TJ Tstg 5.0 40 *5.0 40 40 250 300 -50 to +100 -50 to +125 -55 to +150 A V V V V mJ mW C C C Value 300 4.0 150 2.67 "50 Unit mW mW/C mA mA/C mA A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *Indicates JEDEC Registered Data 1. Anode positive, RGA = 1000 W Anode negative, RGA = open 2. E = 0.5 CV2 capacitor discharge energy limiting resistor and repetition. 3. Derate current and power above 25C. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes (t1/16 from case, 10 seconds maximum) Symbol RqJC RqJA TL Max 75 200 260 Unit C/W C/W C http://onsemi.com 2 2N6027, 2N6028 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Peak Current* (VS = 10 Vdc, RG = 1 MW) (VS = 10 Vdc, RG = 10 kW) Offset Voltage* (VS = 10 Vdc, RG = 1 MW) (VS = 10 Vdc, RG = 10 kW) Valley Current* (VS = 10 Vdc, RG = 1 MW) (VS = 10 Vdc, RG = 10 k W) (VS = 10 Vdc, RG = 200 W) Gate to Anode Leakage Current* (VS = 40 Vdc, TA = 25C, Cathode Open) (VS = 40 Vdc, TA = 75C, Cathode Open) Gate to Cathode Leakage Current (VS = 40 Vdc, Anode to Cathode Shorted) Forward Voltage* (IF = 50 mA Peak) (Note 4) Peak Output Voltage* (VG = 20 Vdc, CC = 0.2 mF) Pulse Voltage Rise Time (VB = 20 Vdc, CC = 0.2 mF) *Indicates JEDEC Registered Data 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. +VB A G VAK K R2 - VS = R1 R1 V R1 + R2 B IA + VAK RG = R1 R2 R1 + R2 RG VS VF VV 1A - Programmable Unijunction with Program" Resistors R1 and R2 1B - Equivalent Test Circuit for Figure 1A used for electrical characteristics testing (also see Figure 2) IGAO IP IV IF VA VS -VP VT = VP - VS 2N6027 2N6028 2N6027 2N6028 1 2N6027 2N6028 (Both Types) 1,4,5 2N6027 2N6028 2N6027 2N6028 2N6027 2N6028 - IGAO - - - 1,6 3,7 3 IGKS VF Vo tr - - 6.0 - 1.0 3.0 5.0 0.8 11 40 10 - 50 1.5 - 80 nAdc V V ns IV - - 70 25 1.5 1.0 18 18 150 150 - - 50 25 - - - - VT 0.2 0.2 0.2 0.70 0.50 0.35 1.6 0.6 0.6 mA Fig. No. 2,9,11 Symbol IP - - - - 1.25 0.08 4.0 0.70 2.0 0.15 5.0 1.0 V Min Typ Max Unit mA mA nAdc IA IA IC - Electrical Characteristics Figure 1. Electrical Characterization +VB +V 510 k R RG = R/2 VS = VB/2 (See Figure 1) R CC 20 W vo 27 k 0.6 V tf t 16 k Vo 6.0 V Adjust for Turn-on Threshold VB 100 k 1.0% - IP (SENSE) 100 mV = 1.0 nA + 2N5270 0.01 mF Scope 20 Put Under Test Figure 2. Peak Current (IP) Test Circuit http://onsemi.com 3 Figure 3. Vo and tr Test Circuit 2N6027, 2N6028 TYPICAL VALLEY CURRENT BEHAVIOR 1000 IV, VALLEY CURRENT (m A) IV, VALLEY CURRENT (m A) 500 RG = 10 kW 100 RG = 10 kW 100 100 kW 100 kW 10 1 MW 1 MW 10 5 10 VS, SUPPLY VOLTAGE (V) 15 20 5 -50 -25 0 +25 +50 +75 +100 TA, AMBIENT TEMPERATURE (C) Figure 4. Effect of Supply Voltage Figure 5. Effect of Temperature 10 VP, PEAK FORWARD VOLTAGE (V) 5.0 2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 TA = 25C Vo, PEAK OUTPUT VOLTAGE (V) 25 TA = 25C (SEE FIGURE 3) 20 CC = 0.2 mF 15 10 1000 pF 5.0 0 0 5.0 10 15 20 25 30 35 40 IF, PEAK FORWARD CURRENT (AMP) VS, SUPPLY VOLTAGE (V) Figure 6. Forward Voltage Figure 7. Peak Output Voltage A G E A P N P N K G B2 R2 RBB = R1 + R2 R1 h= R1 + R2 R1 RT A G R1 K B1 R2 + CC K Circuit Symbol Equivalent Circuit with External Program" Resistors R1 and R2 Typical Application Figure 8. Programmable Unijunction http://onsemi.com 4 2N6027, 2N6028 TYPICAL PEAK CURRENT BEHAVIOR 2N6027 10 IP, PEAK CURRENT ( mA) 5.0 3.0 2.0 1.0 RG = 10 kW 0.5 0.3 0.2 0.1 5.0 100 kW 1.0 MW TA = 25C (SEE FIGURE 2) 100 50 IP, PEAK CURRENT ( mA) 20 10 5.0 2.0 1.0 0.5 0.2 10 15 20 0.1 -50 -25 RG = 10 kW 100 kW 1.0 MW 0 +25 +50 +75 +100 VS = 10 V (SEE FIGURE 2) VS, SUPPLY VOLTAGE (V) TA, AMBIENT TEMPERATURE (C) Figure 9. Effect of Supply Voltage and RG Figure 10. Effect of Temperature and RG 2N6028 1.0 0.7 0.5 RG = 10 kW 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 5.0 100 kW 10 5.0 IP, PEAK CURRENT ( mA) 2.0 1.0 0.5 0.2 0.1 100 kW 1.0 MW -25 +25 +75 0 +50 TA, AMBIENT TEMPERATURE (C) +100 RG = 10 kW VS = 10 V (SEE FIGURE 2) IP, PEAK CURRENT ( mA) 1.0 MW TA = 25C (SEE FIGURE 2) 0.05 0.02 10 15 VS, SUPPLY VOLTAGE (V) 20 0.01 -50 Figure 11. Effect of Supply Voltage and RG ORDERING INFORMATION U.S. 2N6027 2N6027G 2N6028 2N6028G 2N6027RLRA 2N6027RLRAG 2N6028RLRA 2N6028RLRAG 2N6028RLRM 2N6028RLRMG 2000 / Tape & Ammo Box 2N6028RLRP 2N6027RL1 2N6027RL1G 2000 / Tape & Reel 5000 Units / Box European Equivalent Shipping Figure 12. Effect of Temperature and RG Description of TO-92 Tape Orientation N/A - Bulk Round side of TO-92 and adhesive tape visible Flat side of TO-92 and adhesive tape visible Round side of TO-92 and adhesive tape visible 2N6028RLRPG For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *The "G'' suffix indicates Pb-Free package available. http://onsemi.com 5 2N6027, 2N6028 PACKAGE DIMENSIONS TO-92 (TO-226AA) CASE 029-11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- K XX G H V 1 D J C SECTION X-X N N DIM A B C D G H J K L N P R V STYLE 16: PIN 1. ANODE 2. GATE 3. CATHODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 2N6027/D |
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